sot89 pnp silicon planar medium power transistors issue 3 C february 1996 j complementary type C bcx51 C bcx54 bcx52 C bcx55 bcx53 C bcx56 partmarking details C bcx51 C aa bcx52 C ae bcx53 C ah bcx51-10 C ac bcx52-10 C ag BCX53-10 C ak bcx51-16 C ad bcx52-16 C am bcx53-16 C al absolute maximum ratings. parameter symbol bcx51 bcx52 bcx53 unit collector-base voltage v cbo -45 -60 -100 v collector-emitter voltage v ceo -45 -60 -80 v emitter-base voltage v ebo -5 v peak pulse current i cm -1.5 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -65 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base bcx53 breakdown bcx52 voltage bcx51 v (br)cbo -100 -60 -45 v v v i c =-100 m a i c =-100 m a i c =-100 m a collector-emitter bcx53 breakdown bcx52 voltage bcx51 v (br)ceo -80 -60 -45 vi c =-10ma* i c =-10ma* i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-10 m a collector cut-off current i cbo -0.1 -20 m a m a v cb =-30v v cb =-30v, t amb =150c emitter cut-off current i ebo -20 na v eb =-4v collector-emitter saturation voltage v ce(sat) -0.5 v i c =-500ma, i b =-50ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-500ma, v ce =-2v* static forward current transfer ratio h fe -10 -16 25 40 25 63 100 250 160 250 i c =-5ma, v ce =-2v* i c =-150ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-150ma, v ce =-2v* i c =-150ma, v ce =-2v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v, f=100mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% bcx51 bcx52 bcx53 c c b e sot89 3 - 34
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